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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3P(I) package Collector-emitter sustaining voltageVCEO(sus)=400V(Min) Fast switching times APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC3306 Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER INC Collector-base voltage Collector-emitter voltage ANG H E SEM OND IC CONDITIONS TOR UC VALUE 500 400 7 10 15 5 UNIT V V V A A A W ae ae Open emitter Open base Open collector Emitter-base voltage Collector current-DC Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 100 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ,IB=0 IC=1mA ,IE=0 IE=1mA ,IC=0 IC=5A; IB=0.5A IC=5A; IB=0.5A VCB=400V; IE=0 VEB=7V; IC=0 IC=5A ; VCE=5V 10 MIN 400 500 7 TYP. 2SC3306 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE MAX UNIT V V V 1.5 2.0 100 1.0 |I V V A mA Switching times tr tstg tf Rise time Storage time Fall time IN ANG CH MIC E SE VCC=200V; IC=5.0A IB1=-IB2=0.5A;RL=40 | OND TOR UC 1.0 |I 2.5 1.0 s |I |I s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3306 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3306 CHA IN E SEM NG OND IC TOR UC 4 |
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